Superconductivity in transparent zinc-doped In2O3 films having low carrier density

Thin polycrystalline zinc-doped indium oxide (In2O3–ZnO) films were prepared by post-annealing amorphous films with various weight concentrations x of ZnO in the range 0≤x ≤0.06. We have studied the dependences of the resistivity ρ and Hall coefficient on temperature T and magnetic field H in the ra...

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Autor principal: Kazumasa Makise, Nobuhito Kokubo, Satoshi Takada, Takashi Yamaguti, Syunsuke Ogura, Kazumasa Yamada, Bunjyu Shinozaki, Koki Yano, Kazuyoshi Inoue and Hiroaki Nakamura
Format: Artigo
Idioma:Inglês
Publicat: Taylor & Francis Group 2008-01-01
Col·lecció:Science and Technology of Advanced Materials
Matèries:
transparent thin films
carrier density
electrical resistivity
annealing effect
superconductivity
Accés en línia:http://dx.doi.org/10.1088/1468-6996/9/4/044208
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