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A Photolithography Process Design for 5 nm Logic Process Flow

With the introduction of EUV lithography, the photolithographic process in 5 nm logic process can be simplified to use mostly single exposure method. In a typical 5 nm logic process, the contact-poly pitch (CPP) is 44-50 nm, the minimum metal pitch (MPP) is around 30-32 nm. And the overlay budget is...

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書目詳細資料
Main Authors: Qiang Wu, Yanli Li, Yushu Yang, Yuhang Zhao
格式: Artigo
語言:Inglês
出版: JommPublish 2019-12-01
叢編:Journal of Microelectronic Manufacturing
主題:
euv
在線閱讀:http://www.jommpublish.org/p/41/#
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