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Ambipolar transport in CVD grown MoSe2 monolayer using an ionic liquid gel gate dielectric
CVD grown MoSe2 monolayers were electrically characterized at room temperature in a field effect transistor (FET) configuration using an ionic liquid (IL) as the gate dielectric. During the growth, instead of using MoO3 powder, ammonium heptamolybdate was used for better Mo control of the source and...
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Main Authors: | , , , , , |
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Formato: | Artigo |
Idioma: | Inglês |
Publicado em: |
AIP Publishing LLC
2018-03-01
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Colecção: | AIP Advances |
Acesso em linha: | http://dx.doi.org/10.1063/1.5020443 |
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