Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature
We prepared an indium-free metal oxide thin-film transistor (TFT) using a double-active-layers structure at room temperature. We changed the growth sequence of Al-doped zinc oxide (AZO) and zinc oxide (ZnO) double-active-layers on Si/SiO<sub>2</sub> substrates by magnetron sputtering deposition to r...
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| Hauptverfasser: | , , , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
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MDPI AG
2022-11-01
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| Schriftenreihe: | Micromachines |
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| Online-Zugang: | https://www.mdpi.com/2072-666X/13/11/2024 |
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