Retention enhancement through capacitance-dependent voltage division analysis in 3D stackable TaOx/HfO2-based selectorless memristor

Sneak path current generated by adjacent cells in three-dimensional (3D) memristor arrays must be curbed while securing the multi-bit storage capability of each cell to aid in the cost-effective increase in array size. For this purpose, a 3D stackable TaOx/HfO2-based selectorless memristor has been...

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Autores principales:	Ji Hoon Sung, Ju Hyun Park, Dong Su Jeon, Donghyun Kim, Min Ji Yu, Atul C. Khot, Tukaram D. Dongale, Tae Geun Kim
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	Elsevier 2021-09-01
Colección:	Materials & Design
Materias:	Bilayer memristor Self-rectifying Multilevel memory Crossbar array Nonvolatile memory
Acceso en línea:	http://www.sciencedirect.com/science/article/pii/S0264127521003981
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