Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

Abstract The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the pro...

Disgrifiad llawn

Manylion Llyfryddiaeth

Prif Awduron:	Xiang-Bin Su, Ying Ding, Ben Ma, Ke-Lu Zhang, Ze-Sheng Chen, Jing-Lun Li, Xiao-Ran Cui, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu
Fformat:	Artigo
Iaith:	Inglês
Cyhoeddwyd:	SpringerOpen 2018-02-01
Cyfres:	Nanoscale Research Letters
Pynciau:	Quantum dot (QD) Annealing Bimodal size Molecular beam epitaxy (MBE) Laser
Mynediad Ar-lein:	http://link.springer.com/article/10.1186/s11671-018-2472-y
Tagiau:	Ychwanegu Tag Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!