High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

Abstract Achieving high-efficient spin injection in semiconductors is critical for developing spintronic devices. Although a tunnel spin injector is typically used, the construction of a high-quality tunnel barrier remains a significant challenge due to the large lattice mismatch between oxides and...

Ausführliche Beschreibung

Bibliografische Detailangaben

Hauptverfasser:	Di Lin, Wenyu Kang, Qipeng Wu, Anke Song, Xuefeng Wu, Guozhen Liu, Jianfeng Wu, Yaping Wu, Xu Li, Zhiming Wu, Duanjun Cai, Jun Yin, Junyong Kang
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	SpringerOpen 2022-08-01
Schriftenreihe:	Nanoscale Research Letters
Schlagworte:	Van der Waals tunnelling barrier Boron nitride Spin injection Spintronic devices
Online-Zugang:	https://doi.org/10.1186/s11671-022-03712-5
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