Active Photonic Band-Gap Switch Based on GaInNAs Multiquantum Well
GaInNAs has been introduced to design an active switch operating at wavelength <formula formulatype="inline"> <tex Notation="TeX">$\lambda = 1.2855\ \mu\hbox{m}$</tex></formula> having high selectivity. The device is made of a mono-dimensional periodic photonic band-gap structure constituted by alte...
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| Główni autorzy: | , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
IEEE
2012-01-01
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| Seria: | IEEE Photonics Journal |
| Hasła przedmiotowe: | |
| Dostęp online: | https://ieeexplore.ieee.org/document/6322997/ |
| Etykiety: |
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