Study on Carrier Tuning between p- and n-Ba8Ga16Ge30 Single Crystals
Carrier-type conversion between p- and n-Ba8Ga16Ge30 (BGG) single crystals was realized. The temperature dependence of resistivity has been measured to judge the carrier types of the new batch samples synthesized using physical property measurement system (PPMS). The resistivity data show that p- an...
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| Principais autores: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Editorial Department of Journal of Sichuan University (Natural Science Edition)
2016-01-01
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| coleção: | 四川大学学报. 自然科学版 |
| Assuntos: | |
| Acesso em linha: | http://science.scu.edu.cn/thesisDetails?columnId=45832469&Fpath=home&index=0 |
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