Large inverted band gap in strained three-layer InAs/GaInSb quantum wells

Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band gaps of about 10–18 meV. The former, however, features a band gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature independent. Here, we report...

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Detalles Bibliográficos
Autores principales:	C. Avogadri, S. Gebert, S. S. Krishtopenko, I. Castillo, C. Consejo, S. Ruffenach, C. Roblin, C. Bray, Y. Krupko, S. Juillaguet, S. Contreras, A. Wolf, F. Hartmann, S. Höfling, G. Boissier, J.-B. Rodriguez, S. Nanot, E. Tournié, F. Teppe, B. Jouault
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	American Physical Society 2022-12-01
Colección:	Physical Review Research
Acceso en línea:	http://doi.org/10.1103/PhysRevResearch.4.L042042
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Large inverted band gap in strained three-layer InAs/GaInSb quantum wells

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