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Process Integration and Interconnection Design of Passive-Matrix LED Micro-Displays With 256 Pixel-Per-Inch Resolution

A 0.28-inch InGaN-based blue micro-LED display with 256 pixel-per-inch resolution and a pitch of 100 μm was successfully fabricated in this study. A thick Ti/Al/Ti/Au interconnection metal was deposited on the n-type gallium nitride (n-GaN) region to reduce the interconnection resistance. The...

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Principais autores: Shuo-Huang Yuan, Shih-Siang Yan, Yu-Shiuan Yao, Chung-Cheng Wu, Ray-Hua Horng, Dong-Sing Wuu
Format: Artigo
Sprog:Inglês
Udgivet: IEEE 2020-01-01
Serier:IEEE Journal of the Electron Devices Society
Fag:
Micro-LED
InGaN
display
interconnection
external quantum efficiency
Online adgang:https://ieeexplore.ieee.org/document/8962357/
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