Effects of electrode material and configuration on the characteristics of planar resistive switching devices

We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work...

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主要な著者:	H. Y. Peng, L. Pu, J. C. Wu, D. Cha, J. H. Hong, W. N. Lin, Y. Y. Li, J. F. Ding, A. David, K. Li, T. Wu
フォーマット:	Artigo
言語:	Inglês
出版事項:	AIP Publishing LLC 2013-11-01
シリーズ:	APL Materials
オンライン･アクセス:	http://dx.doi.org/10.1063/1.4827597
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