Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory
High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage...
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| Hauptverfasser: | , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
MDPI AG
2018-10-01
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| Schriftenreihe: | Nanomaterials |
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| Online-Zugang: | http://www.mdpi.com/2079-4991/8/10/799 |
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