Probing defects in ZnO by persistent phosphorescence
Native point defects in ZnO are so complicated that most of them are still debating issues, although they have been studied for decades. In this paper, we experimentally reveal two sub-components usually hidden in the low energy tail of the main broad green luminescence band peaking at 547 nm (~2.26...
Tallennettuna:
| Päätekijät: | , , , , , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China
2018-07-01
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| Sarja: | Opto-Electronic Advances |
| Aiheet: | |
| Linkit: | http://www.oejournal.org/article/doi/10.29026/oea.2018.180011 |
| Tagit: |
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