High-Quality ITO/Al-ZnO/n-Si Heterostructures with Junction Engineering for Improved Photovoltaic Performance

A heterostructure of Sn-doped In₂O₃ (ITO)/Al-doped ZnO (AZO)/n-Si was proposed and studied for photovoltaics. The top ITO worked as a transparent conducting layer for excellent optical transparency and current collection. The AZO/n-Si served as the active junction and provided...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Chong Tong, Manjeet Kumar, Ju-Hyung Yun, Joondong Kim, Sung Jin Kim
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	MDPI AG 2020-07-01
Sarja:	Applied Sciences
Aiheet:	Al-ZnO/Si heterojunction photovoltaic junction engineering built-in potential thin film stress release
Linkit:	https://www.mdpi.com/2076-3417/10/15/5285
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