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Highly Efficient Current‐Induced Torques Originating from Topological Surface States in Sb2Te3

Abstract Topological insulators (TIs) have shown great promise for the development of energy‐efficient and ultra‐fast spintronic devices leveraging charge‐spin interconversion (CSIC) mechanisms. Among them, chalcogenide‐based TIs stand out for their compatibility with wafer‐scale growth techniques....

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Autors principals: Matteo Fettizio, Can Onur Avci, Roberto Mantovan, Emanuele Longo
Format: Artigo
Idioma:Inglês
Publicat: Wiley-VCH 2025-11-01
Col·lecció:Advanced Electronic Materials
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Accés en línia:https://doi.org/10.1002/aelm.202500280
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