Tuning of the Electronic and Magnetic Properties of GaN Monolayers via Doping with Lanthanide Atoms and by Applying Biaxial Strain

The electronic and magnetic properties of lanthanide-doped GaN monolayers (Ln = La, Pr, Nd, Pm, Eu, and Gd) have been systematically investigated using density functional theory within the GGA-PBE approximation. Our results demonstrate that all Ln dopants except La introduce spin polarization and ha...

Popoln opis

Bibliografske podrobnosti

Principais autores:	Xue Wen, Bocheng Lei, Lili Zhang, Haiming Lu
Format:	Artigo
Jezik:	Inglês
Izdano:	MDPI AG 2025-08-01
Serija:	Nanomaterials
Teme:	GaN monolayer lanthanide atoms doping electronic and magnetic property biaxial strain first-principles calculations
Online dostop:	https://www.mdpi.com/2079-4991/15/17/1331
Oznake:	Označite Brez oznak, prvi označite!