High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz
A parabolic potential that confines charge carriers along the growth direction of quantum wells semiconductor systems is characterized by a single resonance frequency, associated to intersubband transitions. Motivated by fascinating quantum optics applications leveraging on this property, we use the...
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| Principais autores: | , , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Wiley
2024-01-01
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| coleção: | Nanophotonics |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1515/nanoph-2023-0704 |
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