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Potential of carbon nanotube field effect transistors for analogue circuits

This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET's potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The latest...

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Principais autores: Khizar Hayat, Hammad M. Cheema, Atif Shamim
Formato: Artigo
Idioma:Inglês
Publicado em: Wiley 2013-11-01
coleção:The Journal of Engineering
Assuntos:
CMOS analogue integrated circuits
invertors
MOSFET
oscillators
photolithography
carbon nanotube field effect transistors
analogue circuits
metal oxide semiconductor field effect transistors
MOSFETs
CNFET lithographic dimensions
complementary metal oxide semiconductor
RF parameters
CNFET-based inverter
three-stage ring oscillator
LC oscillator
oscillation frequency
Acesso em linha:http://digital-library.theiet.org/content/journals/10.1049/joe.2013.0067
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