Código QR (código de barras bidimensional)

Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire

Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investiga...

ver descrição completa

Na minha lista:
Principais autores: Sergey Lazarev, Young Yong Kim, Luca Gelisio, Zhaoxia Bi, Ali Nowzari, Ivan A. Zaluzhnyy, Ruslan Khubbutdinov, Dmitry Dzhigaev, Arno Jeromin, Thomas F. Keller, Michael Sprung, Anders Mikkelsen, Lars Samuelson, Ivan A. Vartanyants
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2021-10-01
coleção:Applied Sciences
Assuntos:
GaN nanowires
Bragg coherent diffraction
piezoelectric effect
finite element method
Acesso em linha:https://www.mdpi.com/2076-3417/11/20/9419
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registros relacionados