Comparison of interfaces, band alignments, and tunneling currents between crystalline and amorphous silica in Si/SiO2/Si structures

Recently, to improve the performance of an integrated metal-oxide-semiconductor (MOS) device, an attempt has been made in the industry to replace the amorphous oxide with a crystalline oxide. However, various characteristics caused by the difference between amorphous and crystalline oxide in the MOS...

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Detalhes bibliográficos

Principais autores:	Eunjung Ko, Jung-Hae Choi
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IOP Publishing 2022-01-01
coleção:	Materials Research Express
Assuntos:	Si/SiO2/Si structures interface structures bandgaps and band offsets leakage-tunneling currents MOS structures interface engineering
Acesso em linha:	https://doi.org/10.1088/2053-1591/ac639f
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