Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays

Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum efficiency still remains a major challenge and different...

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Principais autores:	Andrew I. Yakimov, Victor V. Kirienko, Aleksei A. Bloshkin, Dmitrii E. Utkin, Anatoly V. Dvurechenskii
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	MDPI AG 2021-09-01
סדרה:	Nanomaterials
נושאים:	quantum dots near-infrared photodetection photon-trapping nanostructures telecom
גישה מקוונת:	https://www.mdpi.com/2079-4991/11/9/2302
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