Strain tunable electronic properties of MoSi2N4/WSi2N4 heterostructure
Recently, a new family of layered two-dimensional materials, named MA2Z4 (M = Mo, W; A = Si; Z = N), have been attracting considerable attention due to their excellent ambient stability and physical properties. In this work, we systemically investigated the effect of mechanical strain on the electro...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2024-11-01
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| coleção: | AIP Advances |
| Acesso em linha: | http://dx.doi.org/10.1063/5.0222145 |
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