In‐plane ferroelectrics enabling reduced hysteresis in monolayer MoS2 transistors
Abstract Two‐dimensional (2D) semiconductors, such as monolayer MoS2, has emerged as a profound material platform in the post‐Moore era due to their versatile applications for high‐performance transistors, memories, photodetectors, neuristors, and so on. Nevertheless, the inherent defects in these a...
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| Автори: | , , , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Wiley
2024-07-01
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| Серія: | Carbon Neutralization |
| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1002/cnl2.148 |
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