Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

<p>Abstract</p> <p>We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining...

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Autori principali:	Isella G, Chrastina D, Fedorov A, Bietti S, Somaschini C, Sarti E, Koguchi N, Sanguinetti S
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	SpringerOpen 2010-01-01
Serie:	Nanoscale Research Letters
Soggetti:	Quantum nanostructures III–V semiconductors Si integration Photoluminescence
Accesso online:	http://dx.doi.org/10.1007/s11671-010-9689-8
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