Bismuth-Doped Indium Oxide as a Promising Thermoelectric Material

Bismuth (Bi)-doped indium oxide (In₂O₃) has emerged as a promising thermoelectric material due to its tunable electrical and thermal properties. This study investigates the effects of Bi-doping on the thermoelectric performance of In₂O₃, focusing on its el...

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Autors principals:	Haitao Zhang, Bo Feng, Tongqiang Xiong, Wenzheng Li, Tong Tang, Ruolin Ruan, Peng Jin, Guopeng Zhou, Yang Zhang, Kewei Wang, Yin Zhong, Yonghong Chen, Xiaoqiong Zuo
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2025-08-01
Col·lecció:	Inorganics
Matèries:	bismuth doping indium oxide thermoelectric materials electrical conductivity thermal conductivity power factor
Accés en línia:	https://www.mdpi.com/2304-6740/13/9/277
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