Unlocking Ferroelectricity in Scalable AlBN Films via Plasma‐Enhanced Atomic Layer Deposition

ABSTRACT Ferroelectric metal nitride thin films, particularly AlScN, have recently emerged as transformative materials for next‐generation electronics, owing to their high polarization, tunable coercive fields, exceptional endurance, and thermal stability. In pursuit of device miniaturization, atomi...

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Bibliografiske detaljer

Principais autores:	Jayeong Lee, Jiwon Jeon, Donghwan Jung, Youngjin Lee, Beomkyu Shin, Jae‐Hyeon An, Jong‐Ryul Jeong, Young‐Jun Yu, Hyeyoung Shin, Nari Jeon
Format:	Artigo
Sprog:	Inglês
Udgivet:	Wiley-VCH 2026-01-01
Serier:	Advanced Electronic Materials
Fag:	aluminum boron nitride ferroelectric metal nitride plasma‐enhanced atomic layer deposition polarization switching thin film
Online adgang:	https://doi.org/10.1002/aelm.202500643
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