First-Principles Study of Topological Nodal Line Semimetal I229-Ge<sub>48</sub> via Cluster Assembly
Group IV element-based topological semimetals (TSMs) are pivotal for next-generation quantum devices due to their ultra-high carrier mobility and low-energy consumption. However, germanium (Ge)-based TSMs remain underexplored despite their compatibility with existing semiconductor technologies. Here...
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| Główni autorzy: | , , , , , , , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
MDPI AG
2025-07-01
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| Seria: | Nanomaterials |
| Hasła przedmiotowe: | |
| Dostęp online: | https://www.mdpi.com/2079-4991/15/14/1109 |
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