A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing

Abstract Memristors are a candidate device for artificial neural systems due to their excellent conductance‐regulation ability and potential to simulate the characteristics of biological synapses. This study fabricated a Pt/TaOx/TiOy/Ti analog artificial synapse memristor that exhibits excellent mul...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Mingmin Zhu, Zhendi Yu, Gao Hu, Kai Yu, Yulong Jiang, Jiawei Wang, Wenjing Dong, Jinming Guo, Yang Qiu, Guoliang Yu, Hao‐Miao Zhou
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Wiley-VCH 2024-08-01
Sarja:	Advanced Electronic Materials
Aiheet:	Memristor neuromorphic computing resistive switching synaptic plasticity TaOx/TiOy bilayer
Linkit:	https://doi.org/10.1002/aelm.202400008
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