SiGe HBT Technology Based on a 0.13-<inline-formula> <tex-math notation="TeX">$\mu{\rm m}$ </tex-math></inline-formula> Process Featuring an <inline-formula> <tex-math notation="TeX">${f}_{\rm MAX}$ </tex-math></inline-formula> of 325 GHz
A self-aligned SiGe HBT technology achieving a cutoff frequency (f<sub>T</sub>) of 253 GHz was developed using a selective SiGe epitaxial growth process. Germanium concentration in an i-SiGe layer just under a p<sup>+</sup> intrinsic base region was raised to 27.4% to improve f<sub>T</sub>, and boro...
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| Principais autores: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
IEEE
2014-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Acceso en liña: | https://ieeexplore.ieee.org/document/6783783/ |
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