Spectroscopic Ellipsometry Analysis of Rapid Thermal Annealing Effect on MBE Grown GaAs1−x−Nx
We report on the effect of rapid thermal annealing (RTA) on GaAs1−x−Nx layers, grown by molecular beam epitaxy (MBE), using room temperature spectroscopic ellipsometry (SE). A comparative study was carried out on a set of GaAs1−x−Nx as-grown and the RTA samples with small nitrogen content (x = 0.1%...
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| Glavni autori: | , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
National Institute of Telecommunications
2023-06-01
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| Serija: | Journal of Telecommunications and Information Technology |
| Teme: | |
| Online pristup: | https://jtit.pl/jtit/article/view/914 |
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