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Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the...

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Autor principal: Noorah A Al-Ahmadi
Format: Artigo
Idioma:Inglês
Publicat: IOP Publishing 2020-01-01
Col·lecció:Materials Research Express
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Accés en línia:https://doi.org/10.1088/2053-1591/ab7a60
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