Physical Insights Into the Effect of Substrate on Graphene RF Transistor Performance and Demonstration of Novel Inverted T-Gate Architecture

Graphene has emerged as a promising material for future radio frequency (RF) device applications due to its exceptional carrier mobility, high saturation velocity, and atomically thin structure. These properties enable ultra-fast charge transport and excellent electrostatic control, making graphene...

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Autors principals:	Aadil Bashir Dar, Adil Meersha, Amogh K. M, Asif A. Shah, Anand Kumar Rai, Rupali Verma, Utpreksh Patbhaje, Jeevesh Kumar, Mayank Shrivastava
Format:	Artigo
Idioma:	Inglês
Publicat:	IEEE 2025-01-01
Col·lecció:	IEEE Journal of the Electron Devices Society
Matèries:	RF devices graphene S parameters cut-off frequency CVD graphene substrate
Accés en línia:	https://ieeexplore.ieee.org/document/11087563/
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