Quantitative modeling of threshold instability in β-Ga2O3 finFETs through electro-optical investigation

This paper describes the physical origin of VTH instabilities in β-Ga2O3 finFETs, based on electro-optical measurements. In particular, (i) we investigated the VTH instability by means of pulsed ID–VGs, demonstrating the existence of an electron trapping process involving border states in the dielec...

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Detalhes bibliográficos

Principais autores:	Manuel Fregolent, Francesco Piva, Carlo De Santi, Matteo Buffolo, Wenshen Li, Kazuki Nomoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Formato:	Artigo
Idioma:	Inglês
Publicado em:	AIP Publishing LLC 2026-02-01
coleção:	APL Materials
Acesso em linha:	https://pubs.aip.org/aip/apm/article-pdf/doi/10.1063/5.0304986/20886570/021102_1_5.0304986.pdf
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