Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
Abstract In the growing area of neuromorphic and in-memory computing, there are multiple reviews available. Most of them cover a broad range of topics, which naturally comes at the cost of details in specific areas. Here, we address the specific area of multi-level resistive switching in hafnium-oxi...
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| Autori principali: | , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
SpringerOpen
2023-09-01
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| Serie: | Nano Convergence |
| Accesso online: | https://doi.org/10.1186/s40580-023-00392-4 |
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