3 300 V IGBT / FRD Chipset Design and Development for Traction Application
According to the IGBT characteristics and requirements for traction application, the simulation technique was used on the termination structure design to improve the blocking voltage. The terraced gate structure was developed to increase the switching speed, by adopting the carrier injection efficie...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Chinês |
| Publicado em: |
Editorial Department of Electric Drive for Locomotives
2013-01-01
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| coleção: | 机车电传动 |
| Assuntos: | |
| Acesso em linha: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2013.02.002 |
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