Sub-Nanosecond, High Peak Power Yb:YAG/Cr<sup>4+</sup>:YAG/YVO<sub>4</sub> Passively Q-Switched Raman Microchip Laser with the Emission of Multiple Pulses
This paper demonstrates the capability of sub-nanosecond, high peak power Yb:YAG/Cr<sup>4+</sup>:YAG/YVO<sub>4</sub> passively Q-switched Raman microchip lasers at 1134 nm operated in multiple pulses mode under quasi-continuous-wave (QCW) pumping. Total pulse energy for the Stokes laser was 1.8 mJ w...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI AG
2024-01-01
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| Series: | Photonics |
| Assuntos: | |
| Acceso en liña: | https://www.mdpi.com/2304-6732/11/1/61 |
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