Application of SiC Device in Grid-connected Photovoltaic Inverter
As the third generation of semiconductor materials, Silicon Cabide(SiC) has more obvious advantages than the first and second generation of semiconductor materials, such as forbidden band width, breakdown voltage, electron saturation velocity, thermal conductivity, etc. In order to study the applica...
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| Principais autores: | , , , , |
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| פורמט: | Artigo |
| שפה: | Chinês |
| יצא לאור: |
Editorial Office of Control and Information Technology
2016-01-01
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| סדרה: | Kongzhi Yu Xinxi Jishu |
| נושאים: | |
| גישה מקוונת: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.006 |
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