Germanium on Insulator Fabrication for Monolithic 3-D Integration
A low temperature (T<sub>max</sub> = 350 °C) process for Germanium (Ge) on insulator (GOI) substrate fabrication with thicknesses of less than 25 nm is reported in this paper. The process is based on a single step epitaxial growth of a Ge/SiGe/Ge stack on Si, room temperature wafer bonding an...
Gorde:
| Egile Nagusiak: | , , , , , , , |
|---|---|
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
IEEE
2018-01-01
|
| Saila: | IEEE Journal of the Electron Devices Society |
| Gaiak: | |
| Sarrera elektronikoa: | https://ieeexplore.ieee.org/document/8279445/ |
| Etiketak: |
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!
|