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SWCNT-Si photodetector with voltage-dependent active surface

New works on Carbon Nanotubes-Silicon MIS heterostructures showed that the presence of thickness inhomogeneities in the insulating layer across the device can be exploited to increase their functionalities. In this work, we report the fabrication and characterization of a device consisting of a Sing...

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Furkejuvvon:
Bibliográfalaš dieđut
Váldodahkkit: Daniele Capista, Luca Lozzi, Antonio Di Bartolomeo, Filippo Giubileo, Nadia Martucciello, Maurizio Passacantando
Materiálatiipa: Artigo
Giella:Inglês
Almmustuhtton: IOP Publishing 2023-01-01
Ráidu:Nano Express
Fáttát:
Liŋkkat:https://doi.org/10.1088/2632-959X/ad12d9
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