Probing room temperature indirect and minimum direct band gaps of h-BN
Hexagonal boron nitride (h-BN) has attracted considerable interest as an ultrawide bandgap (UWBG) semiconductor. Experimental studies focused on the detailed near band-edge structure of h-BN at room temperature are still lacking. We report a direct experimental measurement of the near band-edge stru...
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| Hoofdauteurs: | , , , , , , |
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| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
IOP Publishing
2024-01-01
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| Reeks: | Applied Physics Express |
| Onderwerpen: | |
| Online toegang: | https://doi.org/10.35848/1882-0786/ad777a |
| Tags: |
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