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Ge pMOSFETs with GeO x Passivation Formed by Ozone and Plasma Post Oxidation

Abstract A comparison study on electrical performance of Ge pMOSFETs with a GeO x passivation layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed. PPO and OPO were carried out on an Al2O3/n-Ge (001) substrate followed by a 5-nm HfO2 gate dielectric in situ deposit...

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Uloženo v:
Hlavní autoři: Yang Xu, Genquan Han, Huan Liu, Yibo Wang, Yan Liu, Jinping Ao, Yue Hao
Médium: Artigo
Jazyk:Inglês
Vydáno: SpringerOpen 2019-04-01
Edice:Nanoscale Research Letters
Témata:
Germanium
Passivation
Ozone
Plasma
Post oxidation
Metal-oxide-semiconductor field-effect transistor (MOSFET)
On-line přístup:http://link.springer.com/article/10.1186/s11671-019-2958-2
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