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Contact Resistance Increase in Ga-Doped Silicon Solar Cells at Current Injection and Elevated Temperature Treatments

PERC solar cells based on Gallium p-type doping were treated at elevated temperatures in the range of 80…160°C and current injection. Current injection is conducted in a current-induced degradation (CID) setup in the dark, measuring voltage while applying a current at 0.06, 0.53 and 1.0 times the sh...

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Principais autores: Matthias Müller, Mahsa Mohammadi, August Weber, Jonas Kern, Matthias Trempa, Thomas Buck, Johannes Heitmann
Formato: Artigo
Idioma:Inglês
Publicado em: TIB Open Publishing 2026-01-01
coleção:SiliconPV Conference Proceedings
Assuntos:
Carrier Induced Degradation
Contact Resistance
LeTID
PERC
Gallium-Doped
Acesso em linha:https://www.tib-op.org/ojs/index.php/siliconpv/article/view/2697
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