Nanoscaffold Ba0.6Sr0.4TiO3:Nd2O3 ferroelectric memristors crossbar array for neuromorphic computing and secure encryption
Recent advancements in AI have spurred interest in ferroelectric memristors for neuromorphic chips due to their ability to precisely control resistive states through polarization flip-flop without electroforming. However, oxygen vacancies in these devices often cause high leakage current, low endura...
সংরক্ষণ করুন:
| প্রধান লেখক: | , , , , , , , , , , , , , , |
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| বিন্যাস: | Artigo |
| ভাষা: | Inglês |
| প্রকাশিত: |
Elsevier
2025-09-01
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| মালা: | Journal of Materiomics |
| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | http://www.sciencedirect.com/science/article/pii/S2352847825000413 |
| ট্যাগগুলো: |
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