Barrier breakdown mechanism in nano-scale perpendicular magnetic tunnel junctions with ultrathin MgO barrier
Recently, the perpendicular magnetic tunnel junctions (p-MTJs) arouse great interest because of its unique features in the application of spin-transfer-torque magnetoresistive random access memory (STT-MRAM), such as low switching current density, good thermal stability and high access speed. In thi...
Furkejuvvon:
| Váldodahkkit: | , , , , , , , , |
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| Materiálatiipa: | Artigo |
| Giella: | Inglês |
| Almmustuhtton: |
AIP Publishing LLC
2018-05-01
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| Ráidu: | AIP Advances |
| Liŋkkat: | http://dx.doi.org/10.1063/1.5007656 |
| Fáddágilkorat: |
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