High-Speed Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers
InP-based, vertical-cavity surface-emitting lasers (VCSELs) utilizing a buried tunnel junction (BTJ) emitting at 1.55 μm with improved active region and reduced parasitics are demonstrated. A superior modulation bandwidth > 10 GHz is achieved up to 85 °C. The VCSEL device is investi...
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| Autor principal: | |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2010-01-01
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| coleção: | IEEE Photonics Journal |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/5497060/ |
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