Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Abstract In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent...

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Hlavní autoři:	Furqan Zahoor, Tun Zainal Azni Zulkifli, Farooq Ahmad Khanday
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	SpringerOpen 2020-04-01
Edice:	Nanoscale Research Letters
Témata:	Emerging memory Multilevel cell (MLC) Non-volatile storage Oxygen vacancies Resistive random access memory (RRAM) Resistance switching
On-line přístup:	http://link.springer.com/article/10.1186/s11671-020-03299-9
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