A novel design for low insertion loss, multi-band RF-MEMS switch with low pull-in voltage
This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, float metal concept is utilized to reduce the RF overlap area between the movable structure and central conductor of CPW for improving the insertion loss of the device. This has been achieved without affecting...
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| Autori principali: | , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Elsevier
2016-03-01
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| Serie: | Engineering Science and Technology, an International Journal |
| Soggetti: | |
| Accesso online: | http://www.sciencedirect.com/science/article/pii/S2215098615000932 |
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