Voltage Reduced Self Refresh (VRSR) for optimized energy savings in DRAM Memories
Modern computing systems demand DRAMs with more capacity and bandwidth to keep pace with the onslaught of new data-intensive applications. Though DRAM scaling offers higher density devices to realize high memory capacity systems, energy consumption has become a key design limiter. This is owing to t...
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| Główni autorzy: | , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
Elsevier
2023-07-01
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| Seria: | Memories - Materials, Devices, Circuits and Systems |
| Hasła przedmiotowe: | |
| Dostęp online: | http://www.sciencedirect.com/science/article/pii/S277306462300035X |
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