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Effect of Ge doping on the material properties of sprayed Cu2SnS3 thin films

A facile spray pyrolysis processing of ternary Cu2SnS3 and Cu2Sn1−xGexS3 absorbers is presented. The Cu2SnS3 and Cu2Sn1−xGexS3 thin films were sprayed onto both glass and Mo substrates at 350 °C and then annealed at 550 °C with S and SnS/GeS crystals. The impacts of germanium incorporation on the pr...

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Bibliografische Detailangaben
Hauptverfasser: Mohamed H. Sayed, Mohammed M. Gomaa, Mostafa Boshta
Format: Artigo
Sprache:Inglês
Veröffentlicht: Elsevier 2023-07-01
Schriftenreihe:Results in Optics
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Online-Zugang:http://www.sciencedirect.com/science/article/pii/S2666950123001517
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